Invention relates to controlling intensity, colour, phase, polarisation or direction of light. In the method, the angular spectrum of the generated optical two-photon radiation is varied according to the spatial profile of variation of intensity of laser pumping. The key feature of the method is the use of laser pumping in high spatial modes in rigid focusing mode. The method is based on adaptive adjustment of the phase front of laser pumping using an active spatial light phase modulator. This adjusted front, owing to phase synchronism conditions in the nonlinear crystal, generates a biphoton amplitude shape corresponding to a spatial Bell state.

Method of modulating light includes forming a magnetoplasmon crystal based on a periodically nanostructured dielectric array with a spatial period d, sputtering thereon layers of ferromagnetic and noble metals, as well as dielectrics, illuminating the magnetoplasmon crystal with light and applying a magnetic field. Modulation of the intensity of TM polarised reflected light is carried out using a periodically nanostructured film of ferromagnetic metal with thickness h=50-200 nm. The light source used is TM polarised electromagnetic radiation which falls on the surface of the magnetoplasmon crystal at an angle which corresponds to excitation of surface plasmon polaritons. An alternating magnetic field is applied in the form of equatorial Kerr effect.

Method includes identical and paralleled first and second Josephson contacts formed in a layer of high-temperature superconductor (HTSC) and placed along bicrystal boundary of the layer and an input inductive element coupled between adjoining current leads of Josephson contacts. There are auxiliary third and fourth Josephson contacts, at that critical current values of the first and second Josephson contacts coincide, the same value of the third Josephson contact is less and the same value of the fourth Josephson contact is more. HTSC layer is shaped as a path that crosses the bicrystal boundary twice and forms a closed circuit with the above inductive element placed at one side of the bicrystal boundary. The third and fourth Josephson contacts are placed at cross points of the above path with bicrystal boundary, and width of the path at the site of the fourth contact placement exceeds the width for placement of the third one.

Invention relates to measuring equipment, it is a fet-based probe with a nanodimensional channel and can be used for the determination of physical and chemical and electric parameters of nanodimensional objects of the physical, chemical and biological nature. The probe includes the nanodimensional sensitive element placed on a tip and forming the transistor channels, electrodes placed from one side from the tip, connected with the sensitive element and which are functioning as a drain and a source of the transistor. The sensitive element is made in the thin-film structure silicon-on-insulator, formed on a substrate. The silicon layer has a gradient changing concentration of the alloying admixture and is made so that from a free surface, at least on a half of the thickness, it has metal, and on the remained thickness to the insulator layer - semiconductor conductivity. Electrodes are implemented on the named free surface, divided by a gap and have the area which is narrowed towards the tip, and the sensitive element is a fragment of the silicon layer with semiconductor conductivity placed between the electrodes, formed by the removal of a part of the silicon with metal conductivity.

Probe for scanning probe microscope comprises charge sensor arranged at cantilever tip and composed of single-electrode transistor made in silicon layer doped to degenerate state of silicon-on-insulator (SOI) structure on substrate. Transistor has two feed electrodes arranged at acute angle to each other in substrate plate with converging ends staying in contact with transistor feed island to make transistor source and drain, two sharpened mid electrode arranged in the area of convergence of feed electrodes, its tip being directed towards conducting island to make capacitance clearance with the latter acting as transistor gate. Jumpers in zone of contact of feed electrode ends with transistor feed island represent resistor elements to make tunnel transition. Note here that substrate edge is skewed while transistor island, jumpers and feed and mid electrode ends adjoining said skew extend beyond the insulator layer.